Sign In | Join Free | My ecer.co.uk |
|
Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 195A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 407nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 13660pF @ 25V
Supplier Device Package : TO-220AB
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 100A, 10V
Power Dissipation (Max) : 375W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3.7V @ 250µA
Drain to Source Voltage (Vdss) : 75V
Description : MOSFET N-CH 75V 195A TO220
![]() |
IRFB7730PBF Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.