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Power dissipation (maximum) : 83W (Tc)
On resistance at different Id and Vgs (maximum) : 2.3 milliohm @ 50A, 10V
Product Category : MOSFET
Vgs(th) (maximum) for different Id : 2.3V @ 49µA
Vgs (maximum) : ±20V
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Type of installation : Surface mount type
Gate charge (Qg) (maximum) at different Vgs : 30nC @ 4.5V
FET Type : N channel
Technology : MOSFET (Metal Oxide)
Operating Temperature : -55°C ~ 150°C (TJ)
FET function : Standard
Drain-source voltage (Vdss) : 60V
Input capacitance (Ciss) (maximum) at different Vds : 4400pF @ 30V
Current at 25°C-Continuous Drain (Id) : 100A (Tc)
Supplier device packaging : SuperSO8
Package/shell : 8-PowerTDFN
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 8TDSON
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