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SI4435DY

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SI4435DY

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 8.8A (Ta)

FET Type : P-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 24nC @ 5V

Manufacturer : onsemi

Minimum Quantity : 2500

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds : 1604pF @ 15V

Supplier Device Package : 8-SOIC

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 20 mOhm @ 8.8A, 10V

Power Dissipation (Max) : 2.5W (Ta)

Package / Case : 8-SOIC (0.154", 3.90mm Width)

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3V @ 250µA

Drain to Source Voltage (Vdss) : 30V

Description : MOSFET P-CH 30V 8.8A 8-SOIC

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