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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs : 230 nC @ 10 V
Rds On (Max) @ Id, Vgs : 65mOhm @ 500mA, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 850 V
Vgs (Max) : ±30V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 8900 pF @ 25 V
Mounting Type : Through Hole
Series : HiPerFET™, Ultra X
Supplier Device Package : PLUS247™-3
Mfr : IXYS
Current - Continuous Drain (Id) @ 25°C : 66A (Tc)
Power Dissipation (Max) : 1250W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IXFX66
Description : MOSFET N-CH 850V 66A PLUS247-3
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IXFX66N85X Images |
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