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IRFB4332PBF

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RF Front End [27]
Industrial Temperature Sensors [2]
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RFID Transponders [1]
Surface Mount Fuses [155]
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Inclinometers [4]
Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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IRFB4332PBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 250µA

Operating Temperature : -40°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 150 nC @ 10 V

Rds On (Max) @ Id, Vgs : 33mOhm @ 35A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 250 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 5860 pF @ 25 V

Mounting Type : Through Hole

Series : HEXFET®

Supplier Device Package : TO-220AB

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 60A (Tc)

Power Dissipation (Max) : 390W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFB4332

Description : MOSFET N-CH 250V 60A TO220AB

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N-Channel 250 V 60A (Tc) 390W (Tc) Through Hole TO-220AB

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