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PSMN3R7-100BSEJ

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PSMN3R7-100BSEJ

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 1mA

Operating Temperature : 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 246 nC @ 10 V

Rds On (Max) @ Id, Vgs : 3.95mOhm @ 25A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 16370 pF @ 50 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : D2PAK

Mfr : Nexperia USA Inc.

Current - Continuous Drain (Id) @ 25°C : 120A (Ta)

Power Dissipation (Max) : 405W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : PSMN3R7

Description : MOSFET N-CH 100V 120A D2PAK

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N-Channel 100 V 120A (Ta) 405W (Ta) Surface Mount D2PAK
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