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IPD50N04S4L-08

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IPD50N04S4L-08

Product Category : MOSFET

Vgs (Max) : +20V, -16V

Current - Continuous Drain (Id) @ 25°C : 50A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 2500

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : Automotive, AEC-Q101, OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 2340pF @ 25V

Supplier Device Package : PG-TO252-3-313

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 7.3 mOhm @ 50A, 10V

Power Dissipation (Max) : 46W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 2.2V @ 17µA

Drain to Source Voltage (Vdss) : 40V

Description : MOSFET N-CH 40V 50A TO252-3-313

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The IPD50N04S4L-08,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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