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Transistor Polarity : N-Channel
Product Category : MOSFET
Minimum Operating Temperature : - 55 C
Pd-power dissipation : 150 W
Typical on-delay time : 23 ns
Fall Time : 50 ns
Vds-drain source breakdown voltage : 500 V
Manufacturer : Toshiba Semiconductor
Length : 15.5 mm
Configuration : Single
Vgs - Gate-Source Voltage : 30 V
Rds On-drain source on-resistance : 270 mOhms
Rise Time : 30 ns
Number of Channels : 1 Channel
Typical shutdown delay time : 71 ns
Height : 20 mm
Id-continuous drain current : 20 A
Installation style : Through Hole
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Technology : Si
Width : 4.5 mm
Description : Silicon N Channel MOS Type (π−MOSV)
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