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Transistor Polarity : N-Channel
Technology : Si
Id - Continuous Drain Current : 40 A
Mounting Style : Through Hole
Tradename : HiPerFET
Minimum Operating Temperature : - 55 C
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 850 V
Packaging : Tube
Vgs th - Gate-Source Threshold Voltage : 3.5 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 145 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : +/- 30 V
Qg - Gate Charge : 98 nC
Manufacturer : IXYS
Description : MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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