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Transistor Polarity : P-Channel
Technology : Si
Id - Continuous Drain Current : - 1.4 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : DFN1006-3
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : - 20 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : - 450 mV
Product Category : MOSFET
Rds On - Drain-Source Resistance : 940 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : +/- 8 V
Qg - Gate Charge : 1.3 nC
Manufacturer : Nexperia
Description : MOSFET 20V P-channel Trench MOSFET
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