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Transistor Polarity : P-Channel
Technology : Si
Id - Continuous Drain Current : - 23 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : TO-252-3
Maximum Operating Temperature : + 175 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : - 100 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : - 4 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 117 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 64.7 nC
Manufacturer : Infineon Technologies
Description : MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC
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