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FDC645N

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Photoelectric, Industrial [1]
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FDC645N

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs : 21 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 26mOhm @ 6.2A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±12V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1460 pF @ 15 V

Mounting Type : Surface Mount

Series : PowerTrench®

Supplier Device Package : SuperSOT™-6

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)

Power Dissipation (Max) : 1.6W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : FDC645

Description : MOSFET N-CH 30V 5.5A SUPERSOT6

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N-Channel 30 V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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