Sign In | Join Free | My ecer.co.uk |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 250µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs : 19 nC @ 10 V
Rds On (Max) @ Id, Vgs : 2.5Ohm @ 2.25A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 600 V
Vgs (Max) : ±30V
Product Status : Obsolete
Input Capacitance (Ciss) (Max) @ Vds : 670 pF @ 25 V
Mounting Type : Through Hole
Series : QFET®
Supplier Device Package : TO-220F-3
Mfr : onsemi
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Power Dissipation (Max) : 33W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : FQPF5
Description : MOSFET N-CH 600V 4.5A TO220F
![]() |
FQPF5N60C Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.