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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 900mV @ 250µA
Operating Temperature : -50°C ~ 150°C (TJ)
Package / Case : PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs : 300 nC @ 10 V
Rds On (Max) @ Id, Vgs : 4.5mOhm @ 20A, 4.5V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 20 V
Vgs (Max) : ±8V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 8840 pF @ 15 V
Mounting Type : Surface Mount
Series : TrenchFET®
Supplier Device Package : PowerPAK® 1212-8S
Mfr : Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Power Dissipation (Max) : 4.8W (Ta), 57W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : SISS23
Description : MOSFET P-CH 20V 50A PPAK 1212-8S
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SISS23DN-T1-GE3 Images |
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