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SI2319DDS-T1-GE3

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SI2319DDS-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 19 nC @ 10 V

Rds On (Max) @ Id, Vgs : 75mOhm @ 2.7A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 650 pF @ 20 V

Mounting Type : Surface Mount

Series : TrenchFET® Gen III

Supplier Device Package : SOT-23-3 (TO-236)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta), 3.6A (Tc)

Power Dissipation (Max) : 1W (Ta), 1.7W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI2319

Description : MOSFET P-CH 40V 2.7A/3.6A SOT23

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P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Quality SI2319DDS-T1-GE3 for sale

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