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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs : 19 nC @ 10 V
Rds On (Max) @ Id, Vgs : 75mOhm @ 2.7A, 10V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 40 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 650 pF @ 20 V
Mounting Type : Surface Mount
Series : TrenchFET® Gen III
Supplier Device Package : SOT-23-3 (TO-236)
Mfr : Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C : 2.7A (Ta), 3.6A (Tc)
Power Dissipation (Max) : 1W (Ta), 1.7W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : SI2319
Description : MOSFET P-CH 40V 2.7A/3.6A SOT23
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SI2319DDS-T1-GE3 Images |
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