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SQM120P10_10M1LGE3

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Photoelectric, Industrial [1]
NTC Thermistors [40]

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SQM120P10_10M1LGE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 190 nC @ 10 V

Rds On (Max) @ Id, Vgs : 10.1mOhm @ 30A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 9000 pF @ 25 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, TrenchFET®

Supplier Device Package : TO-263 (D²Pak)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 120A (Tc)

Power Dissipation (Max) : 375W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SQM120

Description : MOSFET P-CH 100V 120A TO263

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P-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

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