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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 530 A
Pd - Power Dissipation : 1250 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : HybridPack2
Maximum Operating Temperature : + 150 C
Configuration : 3-Phase
Collector-Emitter Saturation Voltage : 1.4 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
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