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FS600R07A2E3

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FS600R07A2E3

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Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Modules

Continuous Collector Current at 25 C : 530 A

Pd - Power Dissipation : 1250 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : HybridPack2

Maximum Operating Temperature : + 150 C

Configuration : 3-Phase

Collector-Emitter Saturation Voltage : 1.4 V

Product : IGBT Silicon Modules

Manufacturer : Infineon Technologies

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The FS600R07A2E3,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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