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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 995 A
Collector- Emitter Voltage VCEO Max : 1200 V
Pd - Power Dissipation : 4050 W
Maximum Operating Temperature : + 150 C
Configuration : Dual
Collector-Emitter Saturation Voltage : 2.1 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules IGBT 1200V 600A
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