Sign In | Join Free | My ecer.co.uk |
|
Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 150 A
Pd - Power Dissipation : 790 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : Module
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Configuration : Dual
Collector-Emitter Saturation Voltage : 1.75 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
![]() |
FF150R12RT4 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.