Sign In | Join Free | My ecer.co.uk |
|
Gate-Emitter Leakage Current : 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 65 A
Pd - Power Dissipation : 200 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : ISOPLUS i4-PAC-5
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.6 V
Manufacturer : IXYS
![]() |
FID60-06D Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.