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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 250 W
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : TO-247
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Continuous Collector Current at 25 C : 70 A
Manufacturer : STMicroelectronics
Description : IGBT Transistors 45A 600V Ultra Fast IGBT
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