Sign In | Join Free | My ecer.co.uk |
|
Gate-Emitter Leakage Current : 600 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 50 A
Pd - Power Dissipation : 326 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.7 V
Manufacturer : Infineon Technologies
![]() |
IKW25N120H3 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.