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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 335 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : Econo 3
Maximum Operating Temperature : + 150 C
Configuration : Array 7
Collector-Emitter Saturation Voltage : 1.9 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules N-CH 600V 100A
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