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Gate-Emitter Leakage Current : 500 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 50 A
Pd - Power Dissipation : 156 W
Collector- Emitter Voltage VCEO Max : 1000 V
Package / Case : TO-3PN
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : 25 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.5 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors N-ch / 50A 1000V
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