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Gate-Emitter Leakage Current : +/- 400 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 349 W
Collector-Emitter Saturation Voltage : 2.1 V
Package / Case : TO-247
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Collector Current at 25 C : 80 A
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors 600V, 40A Field Stop IGBT
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