Sign In | Join Free | My ecer.co.uk |
|
Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 44 A
Pd - Power Dissipation : 200 W
Collector- Emitter Voltage VCEO Max : 1.7 kV
Package / Case : ISOPLUS i4-Pak-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.7 V
Manufacturer : IXYS
Description : IGBT Transistors 26 Amps 1700V 3.5 V Rds
![]() |
IXGF32N170 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.