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Gate-Emitter Leakage Current : +/- 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 95 A
Pd - Power Dissipation : 937 W
Collector- Emitter Voltage VCEO Max : 2.5 kV
Package / Case : TO-247PLUS-HV-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 3.4 V
Manufacturer : IXYS
Description : IGBT Transistors 2500V/95A , HV XPT IGBT Copacked
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IXYX25N250CV1HV Images |
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