Sign In | Join Free | My ecer.co.uk
China AI CHIPLINK LIMITED logo
AI CHIPLINK LIMITED
Purchasing easier,faster and save more
Verified Supplier

2 Years

Home > IGBT Transistors >

HGT1S10N120BNST

Product Categories
AI CHIPLINK LIMITED
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

HGT1S10N120BNST

  • 1
  • 2
  • 3

Gate-Emitter Leakage Current : +/- 250 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 35 A

Pd - Power Dissipation : 298 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-263AB-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 2.7 V

Manufacturer : Fairchild Semiconductor

Description : IGBT Transistors N-Channel IGBT NPT Series 1200V

Contact Now

The HGT1S10N120BNST,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Quality HGT1S10N120BNST for sale

HGT1S10N120BNST Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: AI CHIPLINK LIMITED
*Subject:
*Message:
Characters Remaining: (0/3000)