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Gate-Emitter Leakage Current : +/- 250 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 35 A
Pd - Power Dissipation : 298 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-263AB-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Reel
Configuration : Single
Collector-Emitter Saturation Voltage : 2.7 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors N-Channel IGBT NPT Series 1200V
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