Sign In | Join Free | My ecer.co.uk |
|
Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 450 A
Pd - Power Dissipation : 1600 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : 62 mm
Maximum Operating Temperature : + 150 C
Packaging : Tray
Configuration : Dual
Collector-Emitter Saturation Voltage : 2.1 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
![]() |
FF300R12KT4 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.