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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Minimum Operating Temperature : - 40 C
Length : 106.4 mm
Continuous Collector Current at 25 C : 370 A
Installation style : Chassis Mount
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : 62 mm
Factory packaging quantity : 10
Maximum Operating Temperature : + 125 C
Height : 30.9 mm
Package : Tray
Technology : Si
Pd-power dissipation : 1950 W
Configuration : Dual
Width : 61.4 mm
Gate/emitter maximum voltage : 20 V
trademark : Infineon Technologies
Collector-Emitter Saturation Voltage : 3.75 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
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