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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 300 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247AD-3
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.18 V
Manufacturer : IXYS
Description : IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
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