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FPAB30BH60B

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FPAB30BH60B

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Gate-Emitter Leakage Current : 250 uA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Collector- Emitter Voltage VCEO Max : 600 V

Pd - Power Dissipation : 104 W

Maximum Operating Temperature : + 125 C

Packaging : Tube

Continuous Collector Current at 25 C : 30 A

Manufacturer : Fairchild Semiconductor

Description : IGBT Transistors SPM for Front-End Rectifier;Motion-SPM

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The FPAB30BH60B,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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