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Gate-Emitter Leakage Current : 250 uA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 600 V
Pd - Power Dissipation : 104 W
Maximum Operating Temperature : + 125 C
Packaging : Tube
Continuous Collector Current at 25 C : 30 A
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors SPM for Front-End Rectifier;Motion-SPM
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